Sermiconductor light emitting device and method of manufacturing the same
文献类型：专利
| 作者 | BADER, STEFAN; HAHN, BERTHOLD; HÄRLE, VOLKER; LUGAUER, HANS-JÜRGEN; MUNDBROD-VANGEROW, MANFRED; EISERT, DOMINIK |
| 发表日期 | 2018-01-10 |
| 专利号 | EP2270875B1 |
| 著作权人 | OSRAM OPTO SEMICONDUCTORS GMBH |
| 国家 | 欧洲专利局 |
| 文献子类 | 授权发明 |
| 其他题名 | Sermiconductor light emitting device and method of manufacturing the same |
| 英文摘要 | Radiation-emitting semiconductor element comprises a semiconductor body made from a stack of different III-V nitride semiconductor layers (1) and having a first main surface (3) and a second main surface (4). A part of the radiation produced is coupled out through the first main surface. A reflector (6) is applied to the second main surface. An independent claim is also included for a process for the production of the semiconductor element. Preferred Features: The semiconductor layers consist of GaN, AlN, AAlGaN, InGaN, InAlN or AlInGaN. The reflector is formed by a mirroring metallic contact surface made from Ag, Al or a Ag-Al alloy. |
| 公开日期 | 2018-01-10 |
| 申请日期 | 2001-03-16 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/35398]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OSRAM OPTO SEMICONDUCTORS GMBH |
| 推荐引用方式 GB/T 7714 | BADER, STEFAN,HAHN, BERTHOLD,HÄRLE, VOLKER,et al. Sermiconductor light emitting device and method of manufacturing the same. EP2270875B1. 2018-01-10. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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