Gain-coupling distributed feedback type semiconductor laser device
文献类型：专利
| 作者 | FUNABASHI, MASAKI; KASUKAWA, AKIHIKO |
| 发表日期 | 2002-12-10 |
| 专利号 | US6493369 |
| 著作权人 | FURUKAWA ELECTRIC CO., LTD., THE |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Gain-coupling distributed feedback type semiconductor laser device |
| 英文摘要 | A gain-coupling distributed feedback type semiconductor laser device realizing a high light output power without causing an increase in the threshold current or a reduction in the emission efficiency, specifically a gain-coupling distributed feedback type semiconductor laser device comprised of a diffraction grating at least at part of the inside of a cavity and having a gain or loss periodically changing, a reflectance of one end surface (front facet) of the cavity being not more than 3% and the reflectance of the other end surface (rear facet) being larger than the reflectance of that one end surface and not more than 60%, such a gain-coupling distributed feedback type semiconductor laser device wherein the length of said cavity is at least 400 mum, and in particular such a gain-coupling distributed feedback type semiconductor laser device of an absorbing diffraction grating type. |
| 公开日期 | 2002-12-10 |
| 申请日期 | 2001-05-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/35414]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FURUKAWA ELECTRIC CO., LTD., THE |
| 推荐引用方式 GB/T 7714 | FUNABASHI, MASAKI,KASUKAWA, AKIHIKO. Gain-coupling distributed feedback type semiconductor laser device. US6493369. 2002-12-10. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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