Method of improving the fabrication of etched semiconductor devices
文献类型：专利
| 作者 | JOSEPH, JOHN R.; LUO, WENLIN; LEAR, KEVIN L.; BRYAN, ROBERT P. |
| 发表日期 | 2003-11-11 |
| 专利号 | US6645848 |
| 著作权人 | SUMITOMO ELECTRIC DEVICE INNOVATIONS, U.S.A., INC. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method of improving the fabrication of etched semiconductor devices |
| 英文摘要 | This invention relates to a method of improving the fabrication of etched semiconductor devices by using a patterned adhesion promoter layer over a hydrocarbon planarization material. More specifically, the present invention improves the bonding of a metal interconnect layer to a hydrocarbon planarization material, such as polyimide, by inserting an adhesion promotion layer, such as silicon nitride, between the hydrocarbon planarization material and the metal interconnect layer. A process for improving the fabrication of etched semiconductor devices, comprises the steps of: (1) depositing a hydrocarbon planarization material over a substrate; (2) depositing an adhesion promoter over the hydrocarbon planarization material; (3) defining a first mask and etching back the adhesion promoter so as to form an adhesion promoter pad over a portion of the hydrocarbon planarization material; and (4) depositing a first metal over the adhesion promoter pad. |
| 公开日期 | 2003-11-11 |
| 申请日期 | 2001-06-01 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/35415]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SUMITOMO ELECTRIC DEVICE INNOVATIONS, U.S.A., INC. |
| 推荐引用方式 GB/T 7714 | JOSEPH, JOHN R.,LUO, WENLIN,LEAR, KEVIN L.,et al. Method of improving the fabrication of etched semiconductor devices. US6645848. 2003-11-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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