Method for shifting the bandgap energy of a quantum well layer
文献类型：专利
| 作者 | OOI, BOON-SIEW; HO, SENG-TIONG |
| 发表日期 | 2005-04-12 |
| 专利号 | US6878562 |
| 著作权人 | HO, SENG-TIONG |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method for shifting the bandgap energy of a quantum well layer |
| 英文摘要 | A process for shifting the bandgap energy of a quantum well layer (e.g., a III-V semiconductor quantum well layer) without inducing complex crystal defects or generating significant free carriers. The process includes introducing ions (e.g., deep-level ion species) into a quantum well structure at an elevated temperature, for example, in the range of from about 200° C. to about 700° C. The quantum well structure that has had ions introduced therein includes an upper barrier layer, a lower barrier layer and a quantum well layer. The quantum well layer is disposed between the upper barrier layer and the lower barrier layer. The quantum well structure is then thermally annealed, thereby inducing quantum well intermixing (QWI) in the quantum well structure and shifting the bandgap energy of the quantum well layer. Also, a photonic device assembly that includes a plurality of operably coupled photonic devices monolithically integrated on a single substrate using the process described above. |
| 公开日期 | 2005-04-12 |
| 申请日期 | 2001-07-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/35430]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HO, SENG-TIONG |
| 推荐引用方式 GB/T 7714 | OOI, BOON-SIEW,HO, SENG-TIONG. Method for shifting the bandgap energy of a quantum well layer. US6878562. 2005-04-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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