Semiconductor device and manufacturing method thereof
文献类型：专利
| 作者 | SEKINE, NORIHIKO |
| 发表日期 | 2005-02-08 |
| 专利号 | US6853008 |
| 著作权人 | FUJITSU LIMITED |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor device and manufacturing method thereof |
| 英文摘要 | A semiconductor device has a structure in which a GaAs substrate and an InP substrate, different in lattice constant, are bonded to each other. An amorphous layer made of constituent atoms of the GaAs and InP substrates is formed at the interface between the GaAs and InP substrates. Forming the amorphous layer makes it possible to prevent a reduction of light-emitting efficiency caused by a thermal stress at the interface, even when a light-emitting layer by laser oscillation is formed near the interface. Besides, a linear current-voltage characteristic can be obtained at the interface. |
| 公开日期 | 2005-02-08 |
| 申请日期 | 2001-09-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/35440]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LIMITED |
| 推荐引用方式 GB/T 7714 | SEKINE, NORIHIKO. Semiconductor device and manufacturing method thereof. US6853008. 2005-02-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。