Semiconductor laser device having a diffraction grating on a light reflection side
文献类型：专利
| 作者 | FUNABASHI, MASAKI; TSUKIJI, NAOKI; YOSHIDA, JUNJI |
| 发表日期 | 2003-09-02 |
| 专利号 | US6614823 |
| 著作权人 | THE FURUKAWA ELECTRIC CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser device having a diffraction grating on a light reflection side |
| 英文摘要 | A semiconductor device includes an active layer configured to radiate light, a light reflecting facet positioned on a first side of the active layer, a light emitting facet positioned on a second side of the active layer thereby forming a resonant cavity between the light reflecting facet and the light emitting facet, and a partial diffraction grating having a predetermined length and positioned on a light reflecting side of the resonator. The predetermined length of the partial diffraction grating is selected such that the semiconductor device emits a light beam having a plurality of longitudinal modes within a predetermined spectral width of an oscillation wavelength spectrum of the semiconductor device. The predetermined length of the partial diffraction grating may be set in relation to a length of the resonant cavity, or in relation to a coupling coefficient of the diffraction grating. The semiconductor device may also include another partial diffraction grating positioned on the light emitting side of the laser device. |
| 公开日期 | 2003-09-02 |
| 申请日期 | 2001-10-23 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/35445]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | THE FURUKAWA ELECTRIC CO., LTD. |
| 推荐引用方式 GB/T 7714 | FUNABASHI, MASAKI,TSUKIJI, NAOKI,YOSHIDA, JUNJI. Semiconductor laser device having a diffraction grating on a light reflection side. US6614823. 2003-09-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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