Structure and method for fabricating GaN substrates from trench patterned GaN layers on sapphire substrates
文献类型：专利
| 作者 | WONG, WILLIAM S.; BIEGELSEN, DAVID K.; KNEISSL, MICHAEL A. |
| 发表日期 | 2003-09-09 |
| 专利号 | US6617261 |
| 著作权人 | XEROX CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Structure and method for fabricating GaN substrates from trench patterned GaN layers on sapphire substrates |
| 英文摘要 | Gallium nitride substrates are formed by etching a gallium nitride layer on a sapphire substrate or by selective area regrowth of a gallium nitride layer first deposited onto a sapphire substrate. The gallium nitride layers are bonded to a support substrate and a laser pulse directed through the transparent sapphire detaches the gallium nitride layers from the sapphire substrate. The gallium nitride layers are then detached from the support substrate forming freestanding gallium nitride substrates. |
| 公开日期 | 2003-09-09 |
| 申请日期 | 2001-12-18 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/35457]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | XEROX CORPORATION |
| 推荐引用方式 GB/T 7714 | WONG, WILLIAM S.,BIEGELSEN, DAVID K.,KNEISSL, MICHAEL A.. Structure and method for fabricating GaN substrates from trench patterned GaN layers on sapphire substrates. US6617261. 2003-09-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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