Optical devices with heavily doped multiple quantum wells
文献类型：专利
| 作者 | CHO, ALFRED YI; GMACHL, CLAIRE F.; NG, HOCK MIN |
| 发表日期 | 2005-05-10 |
| 专利号 | US6891187 |
| 著作权人 | LUCENT TECHNOLOGIES INC. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Optical devices with heavily doped multiple quantum wells |
| 英文摘要 | A quantum well structure is provided that includes two or more quantum well layers coupled by at least one barrier layer such that at least one of a piezo-electric field and a pyro-electric field is produced. The quantum well structure is sufficiently doped to cause a Fermi energy to be located between ground states and excited states of the coupled quantum well layers. The quantum well structure can be incorporated into a layered semiconductor to form optical devices such as a laser or optical amplifier. |
| 公开日期 | 2005-05-10 |
| 申请日期 | 2002-04-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/35477]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | LUCENT TECHNOLOGIES INC. |
| 推荐引用方式 GB/T 7714 | CHO, ALFRED YI,GMACHL, CLAIRE F.,NG, HOCK MIN. Optical devices with heavily doped multiple quantum wells. US6891187. 2005-05-10. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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