Second-harmonic generation device using semiconductor laser element having quantum-well active layer in which resonator length and mirror loss are arranged to increase width of gain peak
文献类型：专利
| 作者 | ASANO, HIDEKI |
| 发表日期 | 2006-03-21 |
| 专利号 | US7016384 |
| 著作权人 | NICHIA CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Second-harmonic generation device using semiconductor laser element having quantum-well active layer in which resonator length and mirror loss are arranged to increase width of gain peak |
| 英文摘要 | A second-harmonic generation device includes a semiconductor laser element which has a quantum-well active layer, a wavelength control means which controls the wavelength of the light emitted from an end facet of the semiconductor laser element, an optical system which returns to the semiconductor laser element the light the wavelength of which is controlled by the wavelength control means, and a wavelength conversion element which is directly coupled to the other end facet of the semiconductor laser element, and converts the wavelength of the light controlled by the wavelength control means, to a half wavelength. The semiconductor laser element has a resonator length equal to or greater than 900 micrometers and a mirror loss equal to or greater than 16 cm− |
| 公开日期 | 2006-03-21 |
| 申请日期 | 2003-03-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/35522]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NICHIA CORPORATION |
| 推荐引用方式 GB/T 7714 | ASANO, HIDEKI. Second-harmonic generation device using semiconductor laser element having quantum-well active layer in which resonator length and mirror loss are arranged to increase width of gain peak. US7016384. 2006-03-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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