III-nitride light emitting devices fabricated by substrate removal
文献类型：专利
| 作者 | COMAN, CARRIE CARTER; KISH, JR., FRED A.; KRAMES, MICHAEL R; MARTIN, PAUL S |
| 发表日期 | 2004-10-05 |
| 专利号 | US6800500 |
| 著作权人 | KONINKLIJKE PHILIPS ELECTRONICS N V |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | III-nitride light emitting devices fabricated by substrate removal |
| 英文摘要 | A III-nitride light-emitting structure including a p-type layer, an n-type layer, and a light emitting layer is grown on a growth substrate. The III-nitride light-emitting structure is wafer bonded to a host substrate, then the growth substrate is removed. In some embodiments, a first electrical contact and first bonding layer are formed on the III-nitride light-emitting structure. A second bonding layer is formed on the host substrate. In such embodiments, wafer bonding the III-nitride light emitting structure to the host substrate comprises bonding the first bonding layer to the second bonding layer. After the growth substrate is removed, a second electrical contact may be formed on a side of the III-nitride light-emitting device exposed by removal of the growth substrate. |
| 公开日期 | 2004-10-05 |
| 申请日期 | 2003-07-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/35534]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KONINKLIJKE PHILIPS ELECTRONICS N V |
| 推荐引用方式 GB/T 7714 | COMAN, CARRIE CARTER,KISH, JR., FRED A.,KRAMES, MICHAEL R,et al. III-nitride light emitting devices fabricated by substrate removal. US6800500. 2004-10-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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