Nitride semiconductor laser device
文献类型：专利
| 作者 | RYOWA, TATSUYA; ISHIDA, MASAYA; MORISHITA, YUKIKO; KAMIKAWA, TAKESHI; MOTOKI, KENSAKU |
| 发表日期 | 2008-02-05 |
| 专利号 | US7327770 |
| 著作权人 | SHARP KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Nitride semiconductor laser device |
| 英文摘要 | To prevent deterioration induced by wire bonding in a laser device incorporating a semiconductor laser element having a nitride semiconductor laid on top of a nitride semiconductor substrate, the position at which a wire (301) is bonded to an electrode (113) formed on the top surface of a semiconductor layered structure is located off the area right above a dislocation (crystal defect)-concentrated region (X) of the substrate. Concentration of dislocations in the substrate spreads to the layered structure, producing a dislocation-concentrated region in the part of the layered structure located right above the dislocation-concentrated region of the substrate. If a wire is bonded above this region, the pressure applied when the wire is bonded causes the metal of which the electrode is made to diffuse along the concentrated dislocations, lowering the quality of the layered structure and thus resulting in deterioration of the element. Bonding a wire elsewhere than above the dislocation-concentrated region (X) helps prevent such deterioration. |
| 公开日期 | 2008-02-05 |
| 申请日期 | 2004-04-26 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/35546]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | RYOWA, TATSUYA,ISHIDA, MASAYA,MORISHITA, YUKIKO,et al. Nitride semiconductor laser device. US7327770. 2008-02-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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