Semiconductor laser diode and method for manufacturing the same
文献类型：专利
| 作者 | SUNG, YOUN-JOON; JANG, TAE-HOON |
| 发表日期 | 2008-07-29 |
| 专利号 | US7406111 |
| 著作权人 | SAMSUNG ELECTRONICS CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser diode and method for manufacturing the same |
| 英文摘要 | In the semiconductor laser diode, a first material layer, an active layer, and a second material layer are sequentially formed on a substrate, a ridge portion and a first protrusion portion are formed on the second material layer in a direction perpendicular to the active layer, the first protrusion portion being formed at one side of the ridge portion, a second electrode layer is formed in contact with a top surface of the ridge portion, a current restricting layer is formed on an entire surface of the second material layer and exposes the second electrode layer, a protective layer is formed on a surface of the current restricting layer above the first protrusion portion and has an etch selectivity different from that of the current restricting layer, and a bonding metal layer is formed on the current restricting layer and the protective layer in electrical connection with the second electrode layer. |
| 公开日期 | 2008-07-29 |
| 申请日期 | 2006-01-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/35562]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SAMSUNG ELECTRONICS CO., LTD. |
| 推荐引用方式 GB/T 7714 | SUNG, YOUN-JOON,JANG, TAE-HOON. Semiconductor laser diode and method for manufacturing the same. US7406111. 2008-07-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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