Semiconductor laser diode element and method of manufacturing the same
文献类型:专利
作者 | TAKEUCHI, KUNIO; KUNOH, YASUMITSU; HATA, MASAYUKI |
发表日期 | 2011-04-19 |
专利号 | US7929587 |
著作权人 | SANYO ELECTRIC CO., LTD. |
国家 | 美国 |
文献子类 | 授权发明 |
其他题名 | Semiconductor laser diode element and method of manufacturing the same |
英文摘要 | A semiconductor laser diode element includes a semiconductor laser diode portion including a ridge portion extending in a first direction in which a cavity extends, a groove formed along the ridge portion and a support portion formed along the groove on a side farther from the ridge portion and holding the groove between the support portion and the ridge portion and a support substrate bonded to the semiconductor laser diode portion through a fusion layer, wherein the fusion layer is formed so as to be embedded in the groove, a space from the ridge portion to the support substrate and a space from the support portion to the support substrate. |
公开日期 | 2011-04-19 |
申请日期 | 2008-04-25 |
状态 | 失效 |
源URL | [http://ir.opt.ac.cn/handle/181661/35583] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | SANYO ELECTRIC CO., LTD. |
推荐引用方式 GB/T 7714 | TAKEUCHI, KUNIO,KUNOH, YASUMITSU,HATA, MASAYUKI. Semiconductor laser diode element and method of manufacturing the same. US7929587. 2011-04-19. |
入库方式: OAI收割
来源:西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。