中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Semiconductor laser diode element and method of manufacturing the same

文献类型:专利

作者TAKEUCHI, KUNIO; KUNOH, YASUMITSU; HATA, MASAYUKI
发表日期2011-04-19
专利号US7929587
著作权人SANYO ELECTRIC CO., LTD.
国家美国
文献子类授权发明
其他题名Semiconductor laser diode element and method of manufacturing the same
英文摘要A semiconductor laser diode element includes a semiconductor laser diode portion including a ridge portion extending in a first direction in which a cavity extends, a groove formed along the ridge portion and a support portion formed along the groove on a side farther from the ridge portion and holding the groove between the support portion and the ridge portion and a support substrate bonded to the semiconductor laser diode portion through a fusion layer, wherein the fusion layer is formed so as to be embedded in the groove, a space from the ridge portion to the support substrate and a space from the support portion to the support substrate.
公开日期2011-04-19
申请日期2008-04-25
状态失效
源URL[http://ir.opt.ac.cn/handle/181661/35583]  
专题半导体激光器专利数据库
作者单位SANYO ELECTRIC CO., LTD.
推荐引用方式
GB/T 7714
TAKEUCHI, KUNIO,KUNOH, YASUMITSU,HATA, MASAYUKI. Semiconductor laser diode element and method of manufacturing the same. US7929587. 2011-04-19.

入库方式: OAI收割

来源:西安光学精密机械研究所

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