Optical bandwidth enhancement of light emitting and lasing transistor devices and circuits
文献类型：专利
| 作者 | THEN, HAN WUI; WALTER, GABRIEL; FENG, MILTON; HOLONYAK, JR., NICK |
| 发表日期 | 2011-08-23 |
| 专利号 | US8005124 |
| 著作权人 | BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS, THE |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Optical bandwidth enhancement of light emitting and lasing transistor devices and circuits |
| 英文摘要 | A method for producing wide bandwidth laser emission responsive to high frequency electrical input signals, including the following steps: providing a heterojunction bipolar transistor device having collector, base, and emitter regions; providing at least one quantum size region in the base region, and enclosing at least a portion of the base region in an optical resonant cavity; coupling electrical signals, including the high frequency electrical input signals, with respect to the collector, base and emitter region, to cause laser emission from the transistor device; and reducing the operating beta of the transistor laser device to enhance the optical bandwidth of the laser emission in response to the high frequency electrical signals. |
| 公开日期 | 2011-08-23 |
| 申请日期 | 2009-10-14 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/35600]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS, THE |
| 推荐引用方式 GB/T 7714 | THEN, HAN WUI,WALTER, GABRIEL,FENG, MILTON,et al. Optical bandwidth enhancement of light emitting and lasing transistor devices and circuits. US8005124. 2011-08-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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