Two terminal light emitting and lasing devices and methods
文献类型：专利
| 作者 | WALTER, GABRIEL; FENG, MILTON; HOLONYAK, JR., NICK |
| 发表日期 | 2014-03-18 |
| 专利号 | US8675703 |
| 著作权人 | BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS, THE |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Two terminal light emitting and lasing devices and methods |
| 英文摘要 | A method for producing light emission from a semiconductor structure, including the following steps: providing a semiconductor structure that includes a first semiconductor junction between an emitter region of a first conductivity type and a base region of a second conductivity type opposite to that of the first conductivity type, and a second semiconductor junction between the base region and a drain region; providing, within the base region, a region exhibiting quantum size effects; providing an emitter electrode coupled with the emitter region; providing a base/drain electrode coupled with the base region and the drain region; and applying signals with respect to the emitter and base/drain electrodes to obtain light emission from the semiconductor structure. |
| 公开日期 | 2014-03-18 |
| 申请日期 | 2010-01-07 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/35603]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS, THE |
| 推荐引用方式 GB/T 7714 | WALTER, GABRIEL,FENG, MILTON,HOLONYAK, JR., NICK. Two terminal light emitting and lasing devices and methods. US8675703. 2014-03-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。