中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Method of manufacturing semiconductor laser device, semiconductor laser device and light apparatus

文献类型:专利

作者BESSHO, YASUYUKI; OHBO, HIROKI; TAKEUCHI, KUNIO; TOKUNAGA, SEIICHI; KUNOH, YASUMITSU; HATA, MASAYUKI
发表日期2011-11-22
专利号US8064492
著作权人SANYO ELECTRIC CO., LTD
国家美国
文献子类授权发明
其他题名Method of manufacturing semiconductor laser device, semiconductor laser device and light apparatus
英文摘要A method of manufacturing a semiconductor laser device comprises steps of forming a first semiconductor laser device substrate having first grooves for cleavage on a surface thereof, bonding a second semiconductor laser device substrate onto the surface side having the first grooves and thereafter cleaving the first and second semiconductor laser device substrates along at least the first grooves.
公开日期2011-11-22
申请日期2010-01-25
状态失效
源URL[http://ir.opt.ac.cn/handle/181661/35605]  
专题半导体激光器专利数据库
作者单位SANYO ELECTRIC CO., LTD
推荐引用方式
GB/T 7714
BESSHO, YASUYUKI,OHBO, HIROKI,TAKEUCHI, KUNIO,et al. Method of manufacturing semiconductor laser device, semiconductor laser device and light apparatus. US8064492. 2011-11-22.

入库方式: OAI收割

来源:西安光学精密机械研究所

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