DFB laser diode having a lateral coupling for large output power
文献类型：专利
| 作者 | KOETH, JOHANNES BERNHARD; ZELLER, WOLFGANG |
| 发表日期 | 2014-10-07 |
| 专利号 | US8855156 |
| 著作权人 | NANOPLUS GMBH NANOSYSTEMS AND TECHNOLOGIES |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | DFB laser diode having a lateral coupling for large output power |
| 英文摘要 | The invention relates to a DFB laser diode having a lateral coupling, which comprises at least one semi-conductor substrate (10), at least one active layer (40) that is arranged on the semiconductor substrate, at least one ridge (70) that is arranged above the active layer (40), at least one periodic surface structure (110) that is arranged next to the ridge (70) above the active layer (40) and at least one wave guide layer (30, 50) comprising a thickness ≧1 μm that is arranged below and/or above the active layer. |
| 公开日期 | 2014-10-07 |
| 申请日期 | 2010-05-05 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/35610]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NANOPLUS GMBH NANOSYSTEMS AND TECHNOLOGIES |
| 推荐引用方式 GB/T 7714 | KOETH, JOHANNES BERNHARD,ZELLER, WOLFGANG. DFB laser diode having a lateral coupling for large output power. US8855156. 2014-10-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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