High-power quantum cascade lasers with active-photonic-crystal structure for single, in-phase mode operation
文献类型:专利
作者 | BOTEZ, DAN; KIRCH, JEREMY DANIEL |
发表日期 | 2013-04-23 |
专利号 | US8428093 |
著作权人 | WISCONSIN ALUMNI RESEARCH FOUNDATION |
国家 | 美国 |
文献子类 | 授权发明 |
其他题名 | High-power quantum cascade lasers with active-photonic-crystal structure for single, in-phase mode operation |
英文摘要 | Semiconductor laser array devices capable of emitting mid- to long-wavelength infrared (i.e., 4-12 μm) radiation are provided. The devices include a quantum cascade laser (QCL) structure comprising one or more active cores; an optical confinement structure; a cladding structure, and a plurality of laterally-spaced trench regions extending transversely through the cladding and optical confinement structures, and partially into the QCL structure. The trench regions define a plurality of laterally-spaced interelement regions separated by element regions in the laser array device. The element regions are characterized by a non-uniform structure across their widths. As a result of this structural non-uniformity, array modes composed of coupled first-order lateral modes of the element regions are preferentially suppressed relative to array modes composed of coupled fundamental lateral modes of the element regions. |
公开日期 | 2013-04-23 |
申请日期 | 2011-03-11 |
状态 | 授权 |
源URL | [http://ir.opt.ac.cn/handle/181661/35616] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | WISCONSIN ALUMNI RESEARCH FOUNDATION |
推荐引用方式 GB/T 7714 | BOTEZ, DAN,KIRCH, JEREMY DANIEL. High-power quantum cascade lasers with active-photonic-crystal structure for single, in-phase mode operation. US8428093. 2013-04-23. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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