Semiconductor integrated device and method for producing the same
文献类型：专利
| 作者 | YAGI, HIDEKI |
| 发表日期 | 2014-08-19 |
| 专利号 | US8811444 |
| 著作权人 | SUMITOMO ELECTRIC INDUSTRIES, LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor integrated device and method for producing the same |
| 英文摘要 | A semiconductor integrated device includes a light-emitting portion including a first lower mesa, a first lower buried layer provided on a side surface of the first lower mesa, a first upper mesa provided above the first lower mesa, and a first upper buried layer provided on a side surface of the first upper mesa; and an optical modulator portion including a second lower mesa, a second lower buried layer provided on a side surface of the second lower mesa, a second upper mesa provided above the second lower mesa, and a second upper buried layer provided on a side surface of the second upper mesa. The first and second lower mesas include first and second core layers optically coupled to each other. The first and second lower buried layers are composed of a semi-insulating semiconductor. The first and second upper buried layers are composed of a resin material. |
| 公开日期 | 2014-08-19 |
| 申请日期 | 2013-01-03 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/35631]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SUMITOMO ELECTRIC INDUSTRIES, LTD. |
| 推荐引用方式 GB/T 7714 | YAGI, HIDEKI. Semiconductor integrated device and method for producing the same. US8811444. 2014-08-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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