Semiconductor modification process for conductive and modified electrical regions and related structures
文献类型：专利
| 作者 | BONAR, JAMES RONALD; VALENTINE, GARETH; GORTON, STEPHEN WARREN; GONG, ZHENG; SMALL, JAMES |
| 发表日期 | 2019-02-19 |
| 专利号 | US10211371 |
| 著作权人 | FACEBOOK TECHNOLOGIES, LLC |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor modification process for conductive and modified electrical regions and related structures |
| 英文摘要 | There is herein described a process for providing improved device performance and fabrication techniques for semiconductors. More particularly, the present invention relates to a process for forming features, such as pixels, on GaN semiconductors using a p-GaN modification and annealing process. The process also relates to a plasma and thermal anneal process which results in a p-GaN modified layer where the annealing simultaneously enables the formation of conductive p-GaN and modified p-GaN regions that behave in an n-like manner and block vertical current flow. The process also extends to Resonant-Cavity Light Emitting Diodes (RCLEDs), pixels with a variety of sizes and electrically insulating planar layer for electrical tracks and bond pads. |
| 公开日期 | 2019-02-19 |
| 申请日期 | 2015-02-13 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/35655]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FACEBOOK TECHNOLOGIES, LLC |
| 推荐引用方式 GB/T 7714 | BONAR, JAMES RONALD,VALENTINE, GARETH,GORTON, STEPHEN WARREN,et al. Semiconductor modification process for conductive and modified electrical regions and related structures. US10211371. 2019-02-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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