Semiconductor devices
文献类型：专利
| 作者 | - |
| 发表日期 | 1974-07-17 |
| 专利号 | GB1360073A |
| 著作权人 | WESTERN ELECTRIC CO INC |
| 国家 | 英国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor devices |
| 英文摘要 | 1360073 Electroluminescence WESTERN ELECTRIC CO Inc 29 Nov 1971 [30 Nov 1970 10 May 1971] 55273/71 Heading C4S [Also in Division H1] The operating life of a Ga-containing PN junction light-emitting device is increased by thermally oxidizing the semi-conductor body in an aqueous oxidizing medium to form a film 16 of gallium oxide at least 100 and baking the device to expel excess moisture from the film 16. The device may emit coherent or non-coherent light, and suitable semi-conductor materials are GaP, GaAs, GaAsP, GaAlAs, AlGaP, InGaAs and InGaP. The GaP device shown comprises an N-type substrate 11 on which are formed, by liquid phase epitaxy or diffusion, a Te-doped N-type layer 12 and a Zn and O-doped P-type layer 13. The device is bonded to a header by a Si-Au preform and a Be-Au electrode 15 is provided on the layer 13. The gallium oxide film 16 is formed, after etching and rinsing, by immersion in an aqueous H 2 O 2 solution. Oxide formation is enhanced by the presence of a noble metal catalyst, either in the solution or bonded to the semi-conductor, e.g. as one of the electrodes, and excess moisture is driven off by heating at progressively higher temperatures up to 150-350 C. An additional glassy layer 17 of SiO 2 improves the passivating properties of the gallium oxide film 16. The invention may also be applied to PNPN light-emitting devices. Boiling water may also be used as the oxidizing medium. Telephone and other uses are disclosed. |
| 公开日期 | 1974-07-17 |
| 申请日期 | 1971-11-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/35689]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | WESTERN ELECTRIC CO INC |
| 推荐引用方式 GB/T 7714 | -. Semiconductor devices. GB1360073A. 1974-07-17. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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