Semiconductor laser module having an improved temperature control arrangement
文献类型：专利
| 作者 | SAWAI, MASAAKI |
| 发表日期 | 1986-08-05 |
| 专利号 | US4604753 |
| 著作权人 | HITACHI, LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser module having an improved temperature control arrangement |
| 英文摘要 | A semiconductor laser device is provided including semiconductor laser element, a PN-junction element which is used for temperature detection, and a thermoelectric heat pump which is electrically connected to the PN-junction element. According to this arrangement, heat developing from the semiconductor laser element is sensed by exploiting the fact that the forward voltage VF of the PN-junction element or PN-junction diode changes in correspondence with the change of the ambient temperature (this phenomenon itself is a matter already known), and the change of the forward voltage VF is fed back to the thermoelectric heat pump. Therefore, even when the semiconductor laser device is placed in the condition of a very high ambient temperature (open air temperature), the semiconductor laser element is cooled down to a predetermined temperature by the thermoelectric heat pump so as to produce a prescribed optical power at all times. Thus, the semiconductor laser element itself is driven in an appropriate temperature condition (for example, 25 DEG C.), so that the degradation of the semiconductor laser element can be prevented. |
| 公开日期 | 1986-08-05 |
| 申请日期 | 1983-11-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/35788]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI, LTD. |
| 推荐引用方式 GB/T 7714 | SAWAI, MASAAKI. Semiconductor laser module having an improved temperature control arrangement. US4604753. 1986-08-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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