Diode laser pumped co-doped laser
文献类型：专利
| 作者 | FAN, TSO Y.; BYER, ROBERT L. |
| 发表日期 | 1987-10-20 |
| 专利号 | US4701928 |
| 著作权人 | BOARD OF TRUSTEES, LELAND J. STANFORD UNIVERSITY |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Diode laser pumped co-doped laser |
| 英文摘要 | A miniature solid state near room temperature laser includes a laser crystal doped with a laser ion and an absorber ion. The absorber ion absorbs pumping radiation derived from the output of a laser diode and transfers the absorbed energy to the laser ion for inverting the population of the desired energy transition levels to produce an eyesafe output beam with wavelengths greater than 4 microns. In a preferred embodiment, the host crystal is YAG and it is co-doped with Ho as the laser ion and Er as the absorber ion. A small concentration of Tm ion may be doped into the crystal to enhance pumping efficiency. Improved efficiency can be obtained by cooling the laser crystal with a thermoelectric cooler and by tuning the output of the diode laser pump to an absorption peak of the absorbing ion. |
| 公开日期 | 1987-10-20 |
| 申请日期 | 1985-10-02 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/35834]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | BOARD OF TRUSTEES, LELAND J. STANFORD UNIVERSITY |
| 推荐引用方式 GB/T 7714 | FAN, TSO Y.,BYER, ROBERT L.. Diode laser pumped co-doped laser. US4701928. 1987-10-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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