Semiconductor radiation coupling system
文献类型：专利
| 作者 | EVANS, GARY A.; KIRK, JAY B. |
| 发表日期 | 1990-04-24 |
| 专利号 | US4919507 |
| 著作权人 | GENERAL ELECTRIC COMPANY, A CORP. OF NY |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor radiation coupling system |
| 英文摘要 | A first array of laser diode devices are optically coupled by a diffraction grating comprising a plurality of spaced diffraction nodules in a grid array optically coupled to the devices. The light emitted from a device of the first array can pass through the grid array to a second device, reflect back to the emitting device in a Distributed Bragg Reflector (DBR) mode and deflect orthogonal to the emitted light optical axis to a third device in a Distributed Bragg Deflector (DBD) mode. The light from the second and third devices can be coupled to other laser diode devices by still further diffraction nodule arrays to produce phased-locked beams; beam steering of portions of the light and other effects. |
| 公开日期 | 1990-04-24 |
| 申请日期 | 1989-05-10 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/35928]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | GENERAL ELECTRIC COMPANY, A CORP. OF NY |
| 推荐引用方式 GB/T 7714 | EVANS, GARY A.,KIRK, JAY B.. Semiconductor radiation coupling system. US4919507. 1990-04-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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