Semiconductor device mounted on a heat sink with an intervening amorphous semiconductor material
文献类型：专利
| 作者 | SHIGIHARA, KIMIO; NAGAI, YUTAKA; AOYAGI, TOSHITAKA |
| 发表日期 | 1993-09-21 |
| 专利号 | US5247203 |
| 著作权人 | MITSUBISHI DENKI KABUSHIKI KAISHA, |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor device mounted on a heat sink with an intervening amorphous semiconductor material |
| 英文摘要 | A semiconductor device having a semiconductor element (6) and a heat sink (1) radiating heat generated in the semiconductor element includes an amorphous semiconductor film (8) provided on the heat sink and the semiconductor element is put on the heat sink via the amorphous semiconductor film. Therefore, the stress, applied to the semiconductor element can be reduced because of the amorphous semiconductor film. In a construction where an amorphous semiconductor film comprising amorphous silicon or amorphous germanium is formed on the heat sink via a first metal film (9) and the semiconductor element is bonded to the amorphous semiconductor film via a second metal film (12), ohmic contact is made by alloys formed between the amorphous semiconductor film and the first and second metal film. Furthermore, in a construction where an amorphous semiconductor film is formed only at a region on the heat sink where the semiconductor element is put, and a metal film having electric resistance lower than that of the amorphous semiconductor film is formed on the amorphous semiconductor film and the heat sink, and the semiconductor element is formed on the heat sink via the amorphous semiconductor film and the metal film, a passage through which current flows is separated from a passage through which heat flows. |
| 公开日期 | 1993-09-21 |
| 申请日期 | 1991-02-01 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/36022]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KABUSHIKI KAISHA, |
| 推荐引用方式 GB/T 7714 | SHIGIHARA, KIMIO,NAGAI, YUTAKA,AOYAGI, TOSHITAKA. Semiconductor device mounted on a heat sink with an intervening amorphous semiconductor material. US5247203. 1993-09-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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