中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Wavelength selective heterojunction field effect transistor

文献类型:专利

作者TAYLOR, GEOFFREY W.; SARGOOD, STEVE
发表日期1994-11-22
专利号US5367177
著作权人THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE AIR
国家美国
文献子类授权发明
其他题名Wavelength selective heterojunction field effect transistor
英文摘要An optical device which uses a heterojunction field effect detector (HFED) having wavelength selectivity through the use of ion-implantation, and a wavelength selective grating. The device incorporates a Grinsch layer structure with a single GaAs quantum well. The optical power from the lens couples into a guided mode. The absorbing region is the quantum well itself. In the operation of the HFED, a positive bias is applied to the gate, and the depleted GaAs quantum well below the gate absorbs the photons, generating electron-hole pairs. The photocarriers are separated by the electric field before recombination can occur. The photocurrent is then produced in the external circuit by appropriately biasing the device. For collecting the electrons, a positive bias is applied to both the source and drain contacts, which act as dual drain contacts. The holes are removed via the collector which is maintained at ground. To maximize the responsivity (i.e., output photocurrent for input optical power) the edge-coupling technique for coupling the light from an optical fiber into the device is used. Wavelength selectivity is attained through the use of an ion implanted grating to decrease the required length of the device thereby increasing the speed of the device.
公开日期1994-11-22
申请日期1993-05-28
状态失效
源URL[http://ir.opt.ac.cn/handle/181661/36143]  
专题半导体激光器专利数据库
作者单位THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE AIR
推荐引用方式
GB/T 7714
TAYLOR, GEOFFREY W.,SARGOOD, STEVE. Wavelength selective heterojunction field effect transistor. US5367177. 1994-11-22.

入库方式: OAI收割

来源:西安光学精密机械研究所

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