Wavelength selective heterojunction field effect transistor
文献类型:专利
作者 | TAYLOR, GEOFFREY W.; SARGOOD, STEVE |
发表日期 | 1994-11-22 |
专利号 | US5367177 |
著作权人 | THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE AIR |
国家 | 美国 |
文献子类 | 授权发明 |
其他题名 | Wavelength selective heterojunction field effect transistor |
英文摘要 | An optical device which uses a heterojunction field effect detector (HFED) having wavelength selectivity through the use of ion-implantation, and a wavelength selective grating. The device incorporates a Grinsch layer structure with a single GaAs quantum well. The optical power from the lens couples into a guided mode. The absorbing region is the quantum well itself. In the operation of the HFED, a positive bias is applied to the gate, and the depleted GaAs quantum well below the gate absorbs the photons, generating electron-hole pairs. The photocarriers are separated by the electric field before recombination can occur. The photocurrent is then produced in the external circuit by appropriately biasing the device. For collecting the electrons, a positive bias is applied to both the source and drain contacts, which act as dual drain contacts. The holes are removed via the collector which is maintained at ground. To maximize the responsivity (i.e., output photocurrent for input optical power) the edge-coupling technique for coupling the light from an optical fiber into the device is used. Wavelength selectivity is attained through the use of an ion implanted grating to decrease the required length of the device thereby increasing the speed of the device. |
公开日期 | 1994-11-22 |
申请日期 | 1993-05-28 |
状态 | 失效 |
源URL | [http://ir.opt.ac.cn/handle/181661/36143] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE AIR |
推荐引用方式 GB/T 7714 | TAYLOR, GEOFFREY W.,SARGOOD, STEVE. Wavelength selective heterojunction field effect transistor. US5367177. 1994-11-22. |
入库方式: OAI收割
来源:西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。