中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Semiconductor laser and manufacturing method therefor

文献类型:专利

作者TANAKA, HARUO; MUSHIAGE, MASATO; KUSUNOKI, KAORU
发表日期1995-02-21
专利号US5392304
著作权人ROHM CO., LTD.
国家美国
文献子类授权发明
其他题名Semiconductor laser and manufacturing method therefor
英文摘要A semiconductor laser adaptable for a 3-beam method, including a semiconductor laser chip bonded on a primary plane of a flat submount, the semiconductor laser chip having a thickness of 30 to 80 mu m is provided. Also provided is a method for manufacturing a semiconductor laser including the steps of: sequentially stacking layers of compound semiconductor materials on a semiconductor substrate to form a semiconductor laser wafer; mechanically abrading the semiconductor substrate to make it thin; subjecting the mechanically abraded face of the semiconductor substrate to a chemical treatment; forming an electrode film on both sides of the semiconductor laser wafer thus treated; and cutting the semiconductor laser wafer into chips and bonding each of the chips on a submount.
公开日期1995-02-21
申请日期1993-06-01
状态失效
源URL[http://ir.opt.ac.cn/handle/181661/36144]  
专题半导体激光器专利数据库
作者单位ROHM CO., LTD.
推荐引用方式
GB/T 7714
TANAKA, HARUO,MUSHIAGE, MASATO,KUSUNOKI, KAORU. Semiconductor laser and manufacturing method therefor. US5392304. 1995-02-21.

入库方式: OAI收割

来源:西安光学精密机械研究所

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