Semiconductor switch geometry with electric field shaping
文献类型：专利
| 作者 | BOOTH, REX; POCHA, MICHAEL D. |
| 发表日期 | 1994-08-23 |
| 专利号 | US5341017 |
| 著作权人 | UNITED STATES OF AMERICA, THE, AS REPRESENTED BY THE DEPARTMENT OF ENERGY |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor switch geometry with electric field shaping |
| 英文摘要 | An optoelectric switch is disclosed that utilizes a cylindrically shaped and contoured GaAs medium or other optically active semiconductor medium to couple two cylindrically shaped metal conductors with flat and flared termination points each having an ovoid prominence centrally extending there from. Coupling the truncated ovoid prominence of each conductor with the cylindrically shaped optically active semiconductor causes the semiconductor to cylindrically taper to a triple junction circular line at the base of each prominence where the metal conductor conjoins with the semiconductor and a third medium such as epoxy or air. Tapering the semiconductor at the triple junction inhibits carrier formation and injection at the triple junction and thereby enables greater current carrying capacity through and greater sensitivity of the bulk area of the optically active medium. |
| 公开日期 | 1994-08-23 |
| 申请日期 | 1993-06-09 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/36147]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | UNITED STATES OF AMERICA, THE, AS REPRESENTED BY THE DEPARTMENT OF ENERGY |
| 推荐引用方式 GB/T 7714 | BOOTH, REX,POCHA, MICHAEL D.. Semiconductor switch geometry with electric field shaping. US5341017. 1994-08-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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