Method of manufacturing an optical semiconductor device
文献类型：专利
| 作者 | KURATA, KAZUHIKO |
| 发表日期 | 1998-12-29 |
| 专利号 | US5854087 |
| 著作权人 | NEC CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method of manufacturing an optical semiconductor device |
| 英文摘要 | A process wherein a Au layer 3 and a Sn layer 5 are laminated on a barrier layer 8 which is formed on an optical circuit substrate An Au layer 5 having a predetermined thickness is formed on the laminated layers as a top layer. A junction portion 2 is constituted of these layers. An electrode layer of an optical semiconductor element 9 is made to contact with the top Au layer 5 and the optical semiconductor element 9 is pressed to the optical circuit substrate Then, by heating, the optical semiconductor element 9 is joined on the optical circuit substrate. A weight % of Au and Sn in the junction portion 2 of the optical circuit substrate 1 is about 80%:20% before the joining. The electrode layer is formed as a thin Au layer. The optical circuit substrate 1 is heated at a temperature of 280 DEG C. or more such that the Au layer and the Sn layer are melted and is cooled such that Au and Sn are solidified. |
| 公开日期 | 1998-12-29 |
| 申请日期 | 1996-04-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/36321]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORPORATION |
| 推荐引用方式 GB/T 7714 | KURATA, KAZUHIKO. Method of manufacturing an optical semiconductor device. US5854087. 1998-12-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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