Stack type semiconductor laser device
文献类型：专利
| 作者 | OTSUKA, YOSHINORI; ATSUMI, KINYA; KIMURA, YUJI |
| 发表日期 | 1998-09-01 |
| 专利号 | US5802088 |
| 著作权人 | NIPPONDENSO CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Stack type semiconductor laser device |
| 英文摘要 | A stack type semiconductor laser device, which has a large overlapped area of beam patterns made by laser beams irradiated from a plurality of semiconductor laser elements, is disclosed. A first semiconductor laser element is formed on an N-type semiconductor substrate and is bonded to a surface of a pedestal at the side of an N-type electrode thereof through a solder layer. On the other hand, a second semiconductor laser element is differently formed on a P-type semiconductor substrate, and an N-type electrode thereof is bonded to a P-type electrode of the first semiconductor laser element through a solder layer in such a way that the laser beam irradiation planes of both semiconductor laser elements face in the same direction. |
| 公开日期 | 1998-09-01 |
| 申请日期 | 1996-09-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/36353]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPONDENSO CO., LTD. |
| 推荐引用方式 GB/T 7714 | OTSUKA, YOSHINORI,ATSUMI, KINYA,KIMURA, YUJI. Stack type semiconductor laser device. US5802088. 1998-09-01. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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