Optical semiconductor component with deep ridged waveguide
文献类型：专利
| 作者 | DUTTING, KASPAR; KUHN, EDGAR |
| 发表日期 | 1999-08-03 |
| 专利号 | US5933562 |
| 著作权人 | ALCATEL ALSTHOM COMPAGNIE GENERALE D'ELECTRICITE |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Optical semiconductor component with deep ridged waveguide |
| 英文摘要 | PCT No. PCT/EP97/03584 Sec. 371 Date May 19, 1998 Sec. 102(e) Date May 19, 1998 PCT Filed Jun. 26, 1997 PCT Pub. No. WO98/00738 PCT Pub. Date Jan. 8, 1998For use in digital optical telecommunication systems, optical semiconductor components are shown having a transition region for the expansion of the mode field of a light wave in order to reduce losses when coupling to an optical fiber or an optical waveguide of a supporting plate. An optical semiconductor component contains a deep ridged waveguide (RIDGE) with a cover layer (DS) disposed on a substrate (SUB.) The ridged waveguide (RIDGE) has a first (MQW) and second (BULK) waveguide cores, these being separated by a separating layer (SEP). The thickness of this separating layer increases in a transition region (UB1) along a longitudinal direction (L) of the ridged waveguide (RIDGE), thus increasing the vertical distance between the two waveguide centers (MQW, BULK). |
| 公开日期 | 1999-08-03 |
| 申请日期 | 1997-06-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/36412]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ALCATEL ALSTHOM COMPAGNIE GENERALE D'ELECTRICITE |
| 推荐引用方式 GB/T 7714 | DUTTING, KASPAR,KUHN, EDGAR. Optical semiconductor component with deep ridged waveguide. US5933562. 1999-08-03. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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