Manufacturing method for nitride III-V compound semiconductor device using bonding
文献类型：专利
| 作者 | MATSUDA, OSAMU; KOBAYASHI, TOSHIMASA; NAKAYAMA, NORIKAZU; KAWAI, HIROJI |
| 发表日期 | 2001-08-28 |
| 专利号 | US6281032 |
| 著作权人 | SONY CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Manufacturing method for nitride III-V compound semiconductor device using bonding |
| 英文摘要 | In a semiconductor device manufacturing method capable of manufacturing semiconductor lasers, light emitting diodes or electron transport devices using nitride III-V compound semiconductors with a high productivity, a GaN semiconductor laser wafer is prepared in which a plurality of semiconductor lasers are formed on an AlGaInN semiconductor layer on a c-face sapphire substrate and separated from each other by grooves deep enough to reach the c-face sapphire substrate, and a p-side electrode and an n-side electrode are formed in each semiconductor laser. The GaN semiconductor laser wafer is bonded to a photo-diode built-in Si wafer having formed a photo diode for monitoring light outputs and solder electrodes in each pellet by positioning the p-side electrode and the n-side electrode in alignment with the solder electrodes, respectively. After that, by lapping the c-face sapphire substrate from its bottom surface deep enough to reach the grooves or by dicing the c-face sapphire substrate from its bottom surface, the semiconductor lasers on the photo-diode built-in Si wafer are separated from each other. After that, the photo-diode built-in Si wafer is divided by dicing into discrete pellets. A GaN semiconductor laser chip, thus obtained, is assembled on a package. |
| 公开日期 | 2001-08-28 |
| 申请日期 | 1999-04-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/36566]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SONY CORPORATION |
| 推荐引用方式 GB/T 7714 | MATSUDA, OSAMU,KOBAYASHI, TOSHIMASA,NAKAYAMA, NORIKAZU,et al. Manufacturing method for nitride III-V compound semiconductor device using bonding. US6281032. 2001-08-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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