Power transistor cell
文献类型：专利
| 作者 | ZWICKNAGL, HANS-PETER; BAUREIS, PETER; MULLER, JAN-ERIK |
| 发表日期 | 2003-04-15 |
| 专利号 | US6548882 |
| 著作权人 | INFINEON TECHNOLOGIES AG |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Power transistor cell |
| 英文摘要 | A power transistor cell includes an air bridge and a plurality of individual transistors. Each of the plurality of individual transistors has at least one separate connection contact. Each of the at least one separate connection contact of the plurality of individual transistors is thermally conductively connected to one another through the air bridge forming air bridge connections, which define a contact plane. A surface of the contact plane that contains each connection path between two of the air bridge connections defines a convex region. The air bridge is formed to have, in the contact plane, dimensions that exceed a smallest convex region containing all of the air bridge connections in all directions of the air bridge. Each of the plurality of power transistor cells can be respectively thermally conductively connected to one another through the air bridge to form a block of power transistor cells. The air bridge has a dimension that significantly exceeds the length of the contact fingers in the longitudinal direction of the contact fingers, so that components of the air bridge that are present at the sides of a row of contact fingers can be mounted on metallic connection surfaces or on the substrate surface by conductive contact pillars. The configuration provides good heat dissipation from the individual transistors. |
| 公开日期 | 2003-04-15 |
| 申请日期 | 2000-02-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/36625]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | INFINEON TECHNOLOGIES AG |
| 推荐引用方式 GB/T 7714 | ZWICKNAGL, HANS-PETER,BAUREIS, PETER,MULLER, JAN-ERIK. Power transistor cell. US6548882. 2003-04-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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