Semiconductor light emitting device and method for manufacturing the same
文献类型：专利
| 作者 | KURAMACHI, TERUHIKO, C/O FUJI PHOTO FILM CO., LTD. |
| 发表日期 | 2006-05-31 |
| 专利号 | EP1039596B1 |
| 著作权人 | FUJIFILM CORPORATION |
| 国家 | 欧洲专利局 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor light emitting device and method for manufacturing the same |
| 英文摘要 | On a heat sink 1 comprising Cu or CuW, which has a low thermal resistance, an Ni thin film layer is formed by using the plating method at a film thickness of 2 µm to 6 µm. Thereafter, on the face to which a semiconductor light emitting element 5 is to be bonded and the face on the side from which light is to be emitted, a barrier metallic layer 2 comprising Ni or Ti which will not directly react with copper is formed by vapor deposition and the sputtering film formation method at a film thickness of 50 nm to 150 nm in the region as wide as four times the area of the bonding face of the semiconductor light emitting element 5. Thereon, a wettability improving metallic layer 3 of Pd or Pt to improve the wetting with solder is formed consecutively in the same vacuum at a film thickness of 50 nm to 150 nm. Here, the semiconductor light emitting element 5 produced by stacking an AlGaAs layer, a GaAs layer, a GaAsP layer, and an InGaAs layer on a GaAs substrate, and thereafter, forming an N electrode comprising AuGe/Ni/Au and a P electrode comprising Au/Pt/Ti/Pt/Ti is pressed against the bonding face of said heat sink 1 with a load of 10 g to 30 g, while an In solder 4 is melted at a temperature of approx. 200°C to 250 °C, which is followed by cooling and fixing. |
| 公开日期 | 2006-05-31 |
| 申请日期 | 2000-03-17 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/36644]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJIFILM CORPORATION |
| 推荐引用方式 GB/T 7714 | KURAMACHI, TERUHIKO, C/O FUJI PHOTO FILM CO., LTD.. Semiconductor light emitting device and method for manufacturing the same. EP1039596B1. 2006-05-31. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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