Semiconductor laser device and method of fabricating the same
文献类型：专利
| 作者 | TAKEUCHI, KUNIO; OKAMOTO, SHIGEYUKI; HIROYAMA, RYOJI; NOMURA, YASUHIKO; INOUE, DAIJIRO |
| 发表日期 | 2004-08-03 |
| 专利号 | US6771676 |
| 著作权人 | SANYO ELECTRIC CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser device and method of fabricating the same |
| 英文摘要 | A semiconductor laser device capable of improving reliability is obtained in a structure formed by mounting a semiconductor laser element on a submount (base) in a junction-down system. This semiconductor laser device comprises a first electrode layer formed on the surface of a semiconductor element including an emission layer to have a shape comprising recess portions and projection portions, a base mounted with the semiconductor element, and a plurality of low melting point metal layers provided between the first electrode layer formed on the surface of the semiconductor element and the base for bonding the first electrode layer formed on the surface of the semiconductor element and the base to each other. Thus, the plurality of low melting point metal layers easily embed clearances resulting from the shape comprising recess portions and projection portions of the surface of the semiconductor element dissimilarly to a case of employing a single low melting point metal layer. |
| 公开日期 | 2004-08-03 |
| 申请日期 | 2002-09-05 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/36913]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SANYO ELECTRIC CO., LTD. |
| 推荐引用方式 GB/T 7714 | TAKEUCHI, KUNIO,OKAMOTO, SHIGEYUKI,HIROYAMA, RYOJI,et al. Semiconductor laser device and method of fabricating the same. US6771676. 2004-08-03. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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