A method of fabricating vertical devices using a metal support film
文献类型：专利
| 作者 | YOO, MYUNG, CHEOL |
| 发表日期 | 2013-08-07 |
| 专利号 | EP1502284B1 |
| 著作权人 | LG INNOTEK CO., LTD. |
| 国家 | 欧洲专利局 |
| 文献子类 | 授权发明 |
| 其他题名 | A method of fabricating vertical devices using a metal support film |
| 英文摘要 | A method of fabricating semiconductor devices, such as GaN LEDs, on insulating substrates, such as sapphire. Semiconductor layers are produced on the insulating substrate using normal techniques. Trenches that define the boundaries of the individual devices are formed through the semiconductor layers and into the insulating substrate, beneficially by inductive coupled plasma reactive ion etching. A first support structure is attached to the semiconductor layers. The hard substrate is then removed, beneficially by laser lift off. A second supporting structure, preferably conductive, is substituted for the hard substrate and the first supporting structure is removed. Individual devices are then diced, beneficially by etching through the second supporting structure. A protective photo-resist layer can protect the semiconductor layers from the attachment of the first support structure. A conductive bottom contact (possibly reflective) can be inserted between the second supporting structure and the semiconductor layers. |
| 公开日期 | 2013-08-07 |
| 申请日期 | 2003-03-31 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/36975]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | LG INNOTEK CO., LTD. |
| 推荐引用方式 GB/T 7714 | YOO, MYUNG, CHEOL. A method of fabricating vertical devices using a metal support film. EP1502284B1. 2013-08-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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