中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Semiconductor laser device and fabrication method thereof

文献类型:专利

作者TSUJI, MAKOTO
发表日期2007-01-30
专利号US7170102
著作权人SHARP KABUSHIKI KAISHA
国家美国
文献子类授权发明
其他题名Semiconductor laser device and fabrication method thereof
英文摘要A semiconductor laser device aimed to be reduced in size and that can maintain high position accuracy, and a fabrication method of such a semiconductor laser device are achieved. A semiconductor laser device includes a stem as a base member, and a cap member. The stem includes a main unit having a reference plane, and a heat sink platform as an element mount unit, located on the reference plane for mounting a laser element. The cap member is set on the reference plane of the stem so as to cover the heat sink platform. A hole is formed at the sidewall of the cap member facing the heat sink platform. Fixation between the cap member and the stem is established by fixedly attaching the portion at the inner side of the sidewall of the cap member adjacent the hole to the outer circumferential plane of a heat sink platform.
公开日期2007-01-30
申请日期2004-05-14
状态失效
源URL[http://ir.opt.ac.cn/handle/181661/37067]  
专题半导体激光器专利数据库
作者单位SHARP KABUSHIKI KAISHA
推荐引用方式
GB/T 7714
TSUJI, MAKOTO. Semiconductor laser device and fabrication method thereof. US7170102. 2007-01-30.

入库方式: OAI收割

来源:西安光学精密机械研究所

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