Lateral heat spreading layers for epi-side up ridge waveguide semiconductor lasers
文献类型：专利
| 作者 | PHAM, JOHN T.; BRUNO, JOHN D.; TOBER, RICHARD L. |
| 发表日期 | 2006-06-13 |
| 专利号 | US7061022 |
| 著作权人 | ARMY, UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Lateral heat spreading layers for epi-side up ridge waveguide semiconductor lasers |
| 英文摘要 | Disclosed are a semiconductor device and method of manufacturing the same comprising a substrate, a mesa region adjacent to the substrate, an electroplated metal layer, for reducing the thermal resistance of the device, surrounding the mesa region, an insulator layer separating a side portion of the mesa region from the electroplated metal layer, a heat sink, a bonding layer adjacent to the heat sink, and a second metal layer in between the substrate and the heat sink, wherein the substrate is adjacent to the bonding layer, and wherein the electroplated metal layer dimensioned and configured to have a thickness of at least half a thickness of the mesa region; and to laterally spread heat away from the mesa region. The mesa region comprises a first cladding layer adjacent to the substrate, an active region adjacent the first cladding layer, and a second cladding layer adjacent to the active region. |
| 公开日期 | 2006-06-13 |
| 申请日期 | 2004-08-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/37095]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ARMY, UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE |
| 推荐引用方式 GB/T 7714 | PHAM, JOHN T.,BRUNO, JOHN D.,TOBER, RICHARD L.. Lateral heat spreading layers for epi-side up ridge waveguide semiconductor lasers. US7061022. 2006-06-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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