Semiconductor laser device and method of manufacturing the same
文献类型：专利
| ; | |
| 作者 | KAN, HIROFUMI; MIYAJIMA, HIROFUMI; WATANABE, NOBUO |
| 发表日期 | 2009-02-03 ; 2009-02-03 |
| 专利号 | US7486710 ; US7486710 |
| 著作权人 | HAMAMATSU PHOTONICS K.K. ; HAMAMATSU PHOTONICS K.K. |
| 国家 | 美国 ; 美国 |
| 文献子类 | 授权发明 ; 授权发明 |
| 其他题名 | Semiconductor laser device and method of manufacturing the same ; Semiconductor laser device and method of manufacturing the same |
| 英文摘要 | A semiconductor laser device 1 comprises: a heat sink 20, in turn comprising a main cooler unit 21, formed by joining metal members, a fluid channel 30, formed inside the main cooler unit 21, a cooling region 23 on an outer wall surface 22, and a resin layer 40, being continuously coated onto the outer wall surface 22 and an inner wall surface 33 with the exception of the cooling region 23; and a semiconductor laser element 80, positioned at the cooling region 23 with thermal contact with the outer wall surface 22 being maintained. By continuously coating the outer wall surface 22 and the inner wall surface 33 with the resin layer 40 with the exception of the cooling region 23, prevention of corrosion near portions at which the outer wall surface and the inner wall surface contact each other is realized.; A semiconductor laser device 1 comprises: a heat sink 20, in turn comprising a main cooler unit 21, formed by joining metal members, a fluid channel 30, formed inside the main cooler unit 21, a cooling region 23 on an outer wall surface 22, and a resin layer 40, being continuously coated onto the outer wall surface 22 and an inner wall surface 33 with the exception of the cooling region 23; and a semiconductor laser element 80, positioned at the cooling region 23 with thermal contact with the outer wall surface 22 being maintained. By continuously coating the outer wall surface 22 and the inner wall surface 33 with the resin layer 40 with the exception of the cooling region 23, prevention of corrosion near portions at which the outer wall surface and the inner wall surface contact each other is realized. |
| 公开日期 | 2009-02-03 ; 2009-02-03 |
| 申请日期 | 2004-12-16 ; 2004-12-16 |
| 状态 | 失效 ; 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/37117]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HAMAMATSU PHOTONICS K.K. |
| 推荐引用方式 GB/T 7714 | KAN, HIROFUMI,MIYAJIMA, HIROFUMI,WATANABE, NOBUO. Semiconductor laser device and method of manufacturing the same, Semiconductor laser device and method of manufacturing the same. US7486710, US7486710. 2009-02-03, 2009-02-03. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。