Semiconductor element and wafer level chip size package therefor
文献类型：专利
| 作者 | KENTARO NOMOTO; YUKI IGAWA; HIROSHI SAITOH; TAKASHI SATO; TOSHIO OHASHI; YOSHIHIRO OHKURA |
| 发表日期 | 2008-02-29 |
| 专利号 | SG115753A1 |
| 著作权人 | YAMAHA CORPORATION |
| 国家 | 新加坡 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor element and wafer level chip size package therefor |
| 英文摘要 | A semiconductor device, encapsulated in a wafer level chip size package (WLCSP), includes a plurality of pad electrodes formed on the surface of a semiconductor chip, wherein a first insulating layer is formed on the surface of the semiconductor chip except the pad electrodes; a plurality of connection electrodes and at least one heat-dissipation electrode are formed on the surface of the first insulating layer; the pad electrodes and the connection electrodes are mutually connected via a first wiring portion; the heat-dissipation electrode is connected with a second wiring portion; ; and a second insulating layer is formed to enclose the electrodes and wiring portions, wherein the second wiring portion is arranged in proximity to a heating portion of the semiconductor chip and is formed on the surface of the first insulating layer except the prescribed region corresponding to the first wiring portion. |
| 公开日期 | 2005-10-28 |
| 申请日期 | 2005-03-10 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/37130]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | YAMAHA CORPORATION |
| 推荐引用方式 GB/T 7714 | KENTARO NOMOTO,YUKI IGAWA,HIROSHI SAITOH,et al. Semiconductor element and wafer level chip size package therefor. SG115753A1. 2008-02-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。