Broad-band optical semiconductor device and a method for manufacturing the same
文献类型:专利
作者 | HWANG, SEONG-TAEK; SHIM, JONG-IN; JUNG, DAE-KWANG |
发表日期 | 2008-05-06 |
专利号 | US7369588 |
著作权人 | SAMSUNG ELECTRONICS CO., LTD. |
国家 | 美国 |
文献子类 | 授权发明 |
其他题名 | Broad-band optical semiconductor device and a method for manufacturing the same |
英文摘要 | Disclosed is an optical semiconductor device that provides an optical gain or optical loss depending on application of electric current. The optical semiconductor device comprises: a lower clad layer; an active layer disposed on the lower clad layer, the active layer generating optical gain or optical loss depending on injection of carriers; an upper clad layer disposed on the active layer, the upper clad layer serving to trap light in the active layer in cooperation with the lower clad layer; and a temperature control part for controlling the temperature distribution of the active layer along the light propagation axis in such a manner that temperature of the active layer varies depending on positions in the active layer. |
公开日期 | 2008-05-06 |
申请日期 | 2006-02-03 |
状态 | 失效 |
源URL | [http://ir.opt.ac.cn/handle/181661/37196] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | SAMSUNG ELECTRONICS CO., LTD. |
推荐引用方式 GB/T 7714 | HWANG, SEONG-TAEK,SHIM, JONG-IN,JUNG, DAE-KWANG. Broad-band optical semiconductor device and a method for manufacturing the same. US7369588. 2008-05-06. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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