Nitride-based semiconductor light emitting diode
文献类型：专利
| 作者 | LEE, HYUK MIN; SHIN, HYOUN SOO; KIM, CHANG WAN; KIM, YONG CHUN |
| 发表日期 | 2008-11-25 |
| 专利号 | US7456438 |
| 著作权人 | SAMSUNG ELECTRONICS CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Nitride-based semiconductor light emitting diode |
| 英文摘要 | A nitride-based semiconductor LED which is flip-chip bonded on a lead pattern of a sub-mount through a bump ball comprises a substrate; a light-emitting structure formed on the substrate; an electrode formed on the light-emitting structure; a protective film formed on the resulting structure having the electrode formed therein, the protective film exposing the electrode surface corresponding to a portion which is connected to the lead pattern of the sub-mount through a bump ball; and a grid-shape buffer film formed on the electrode surface exposed through the protective film. |
| 公开日期 | 2008-11-25 |
| 申请日期 | 2006-10-17 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/37264]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SAMSUNG ELECTRONICS CO., LTD. |
| 推荐引用方式 GB/T 7714 | LEE, HYUK MIN,SHIN, HYOUN SOO,KIM, CHANG WAN,et al. Nitride-based semiconductor light emitting diode. US7456438. 2008-11-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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