Semiconductor light emitting device and method for fabricating same
文献类型：专利
| 作者 | TAKATANI, KUNIHIRO; HANAOKA, DAISUKE; ISHIDA, MASAYA |
| 发表日期 | 2010-02-02 |
| 专利号 | US7656916 |
| 著作权人 | SHARP KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor light emitting device and method for fabricating same |
| 英文摘要 | A nitride semiconductor device includes a stem. A heat sink is provided on the stem. At least one nitride semiconductor light-emitting element is connected to the heat sink. A light-detecting element for detecting light from the semiconductor light-emitting element is provided on the stem. A cap for encapsulating therein the heat sink, the semiconductor light-emitting element, and the light-detecting element in a sealed manner is connected to the stem. The space in the cap has an encapsulated atmosphere. The encapsulated atmosphere contains a component for inhibiting diffusion of hydrogen atoms contained in the semiconductor light-emitting element. The present invention suppresses defect due to an increase in operation voltage to increase a ratio of good goods thereby improving the fabrication yield of the semiconductor light-emitting device. |
| 公开日期 | 2010-02-02 |
| 申请日期 | 2007-12-19 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/37356]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | TAKATANI, KUNIHIRO,HANAOKA, DAISUKE,ISHIDA, MASAYA. Semiconductor light emitting device and method for fabricating same. US7656916. 2010-02-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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