Integrated tapered diode laser arrangement and method for producing it
文献类型：专利
| 作者 | EBERHARD, FRANZ; SCHLERETH, THOMAS; SCHMID, WOLFGANG |
| 发表日期 | 2011-02-08 |
| 专利号 | US7885302 |
| 著作权人 | OSRAM OPTO SEMICONDUCTORS GMBH |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Integrated tapered diode laser arrangement and method for producing it |
| 英文摘要 | An integrated tapered diode laser arrangement comprises an injector region (2) and a region (3) which is optically coupled to the injector region and expands in a cross section. At least one of said regions (2, 3) has a quantum well structure with a plurality of semiconductor materials, wherein the semiconductor materials are intermixed at least in one region (21, 31). The intermixed region (21, 31) has a larger electrical band gap than a non-intermixed region. |
| 公开日期 | 2011-02-08 |
| 申请日期 | 2008-02-27 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/37365]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OSRAM OPTO SEMICONDUCTORS GMBH |
| 推荐引用方式 GB/T 7714 | EBERHARD, FRANZ,SCHLERETH, THOMAS,SCHMID, WOLFGANG. Integrated tapered diode laser arrangement and method for producing it. US7885302. 2011-02-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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