Gas monitoring device, combustion state monitoring device, secular change monitoring device, and impurity concentration monitoring device
文献类型：专利
| 作者 | INADA, HIROSHI; NAGAI, YOUICHI |
| 发表日期 | 2014-01-07 |
| 专利号 | US8624189 |
| 著作权人 | SUMITOMO ELECTRIC INDUSTRIES, LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Gas monitoring device, combustion state monitoring device, secular change monitoring device, and impurity concentration monitoring device |
| 英文摘要 | [Object] To provide a gas monitoring device etc. with which gas monitoring can be preformed at high sensitivity by using an InP-based photodiode in which a dark current is reduced without a cooling mechanism and the sensitivity is extended to a wavelength of 8 μm or more. [Solution] An absorption layer 3 has a multiquantum well structure composed of group III-V semiconductors, a pn-junction 15 is formed by selectively diffusion of an impurity element in the absorption layer, and the concentration of the impurity element in the absorption layer is 5×1016/cm3 or less. The gas monitoring device detects a gas component and the like contained in a gas by receiving light having at least one wavelength of 3 μm or less. |
| 公开日期 | 2014-01-07 |
| 申请日期 | 2009-07-30 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/37430]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SUMITOMO ELECTRIC INDUSTRIES, LTD. |
| 推荐引用方式 GB/T 7714 | INADA, HIROSHI,NAGAI, YOUICHI. Gas monitoring device, combustion state monitoring device, secular change monitoring device, and impurity concentration monitoring device. US8624189. 2014-01-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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