Semiconductor light emitting devices grown on composite substrates
文献类型：专利
| 作者 | MCLAURIN, MELVIN B.; KRAMES, MICHAEL R. |
| 发表日期 | 2018-08-15 |
| 专利号 | EP2329536B1 |
| 著作权人 | LUMILEDS HOLDING B.V. |
| 国家 | 欧洲专利局 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor light emitting devices grown on composite substrates |
| 英文摘要 | A plurality of III-nitride semiconductor structures, each including a light emitting layer disposed between an n-type region and a p-type region, are grown on a composite substrate. The composite substrate includes a plurality of islands of III-nitride material connected to a host by a bonding layer. The plurality of III-nitride semiconductor structures are grown on the III-nitride islands. The composite substrate may be formed such that each island of III-nitride material is at least partially relaxed. As a result, the light emitting layer of each semiconductor structure has an a-lattice constant greater than 3.19 angstroms. |
| 公开日期 | 2018-08-15 |
| 申请日期 | 2009-09-21 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/37435]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | LUMILEDS HOLDING B.V. |
| 推荐引用方式 GB/T 7714 | MCLAURIN, MELVIN B.,KRAMES, MICHAEL R.. Semiconductor light emitting devices grown on composite substrates. EP2329536B1. 2018-08-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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