Submounts for Semiconductor Lasers
文献类型：专利
| 作者 | PATEL, C. KUMAR N.; LYAKH, ARKADIY; TSEKOUN, ALEXEI; MAULINI, RICHARD |
| 发表日期 | 2011-11-29 |
| 专利号 | US8068524 |
| 著作权人 | PRANALYTICA, INC. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Submounts for Semiconductor Lasers |
| 英文摘要 | A submount for a semiconductor laser. The submount has a layer of silicon carbide (SiC) and a layer of aluminum nitride (AlN) deposited on the layer of SiC. The submount is bonded to the InP-based laser by a hard solder applied to the AlN layer. Preferably, the thickness of the AlN layer is ten to twenty microns, the thickness of the SiC layer is two hundred fifty microns, and the solder is a gold-tin (AuSn) eutectic. The semiconductor laser may be a quantum cascade laser (QCL). Similar combinations of submount materials can be found for other semiconductor laser material systems and types. |
| 公开日期 | 2011-11-29 |
| 申请日期 | 2010-12-28 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/37490]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | PRANALYTICA, INC. |
| 推荐引用方式 GB/T 7714 | PATEL, C. KUMAR N.,LYAKH, ARKADIY,TSEKOUN, ALEXEI,et al. Submounts for Semiconductor Lasers. US8068524. 2011-11-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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