中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Semiconductor device and method for manufacturing the same

文献类型:专利

作者AOKI, TOMOYUKI; TSURUME, TAKUYA; ADACHI, HIROKI; HORIKOSHI, NOZOMI; OHTANI, HISASHI
发表日期2016-11-29
专利号US9508619
著作权人SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
国家美国
文献子类授权发明
其他题名Semiconductor device and method for manufacturing the same
英文摘要A separation layer and a semiconductor element layer including a thin film transistor are formed. A conductive resin electrically connected to the semiconductor element layer is formed. A first sealing layer including a fiber and an organic resin layer is formed over the semiconductor element layer and the conductive resin. A groove is formed in the first sealing layer, the semiconductor element layer, and the separation layer. A liquid is dropped into the groove to separate the separation layer and the semiconductor element layer. The first sealing layer over the conductive resin is removed to form an opening. A set of the first sealing layer and the semiconductor element layer is divided into a chip. The chip is bonded to an antenna formed over a base material. A second sealing layer including a fiber and an organic resin layer is formed so as to cover the antenna and the chip.
公开日期2016-11-29
申请日期2013-06-07
状态授权
源URL[http://ir.opt.ac.cn/handle/181661/37679]  
专题半导体激光器专利数据库
作者单位SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
推荐引用方式
GB/T 7714
AOKI, TOMOYUKI,TSURUME, TAKUYA,ADACHI, HIROKI,et al. Semiconductor device and method for manufacturing the same. US9508619. 2016-11-29.

入库方式: OAI收割

来源:西安光学精密机械研究所

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