中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Encapsulating layer-covered optical semiconductor element, producing method thereof, and optical semiconductor device

文献类型:专利

作者KATAYAMA, HIROYUKI; NORO, HIROSHI; ITO, HISATAKA
发表日期2015-08-25
专利号US9117984
著作权人EPISTAR CORPORATION
国家美国
文献子类授权发明
其他题名Encapsulating layer-covered optical semiconductor element, producing method thereof, and optical semiconductor device
英文摘要A method for producing an encapsulating layer-covered optical semiconductor element includes a disposing step of disposing an encapsulating layer at one side in a thickness direction of a support and a covering step of, after the disposing step, covering an optical semiconductor element with the encapsulating layer so as to expose one surface thereof to obtain an encapsulating layer-covered optical semiconductor element.
公开日期2015-08-25
申请日期2013-12-27
状态授权
源URL[http://ir.opt.ac.cn/handle/181661/37719]  
专题半导体激光器专利数据库
作者单位EPISTAR CORPORATION
推荐引用方式
GB/T 7714
KATAYAMA, HIROYUKI,NORO, HIROSHI,ITO, HISATAKA. Encapsulating layer-covered optical semiconductor element, producing method thereof, and optical semiconductor device. US9117984. 2015-08-25.

入库方式: OAI收割

来源:西安光学精密机械研究所

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