中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Surface emitting semiconductor laser, surface emitting semiconductor laser array, surface emitting semiconductor laser device, optical transmission device, information processing apparatus, and method of producing surface emitting semiconductor laser

文献类型:专利

作者HAYAKAWA, JUNICHIRO; TAKEDA, KAZUTAKA; MURAKAMI, AKEMI
发表日期2016-02-02
专利号US9252562
著作权人FUJI XEROX CO., LTD.
国家美国
文献子类授权发明
其他题名Surface emitting semiconductor laser, surface emitting semiconductor laser array, surface emitting semiconductor laser device, optical transmission device, information processing apparatus, and method of producing surface emitting semiconductor laser
英文摘要A surface emitting semiconductor laser includes a substrate, a first conductivity-type first semiconductor multilayer reflector, an active layer, a semiconductor layer, a second conductivity-type second semiconductor multilayer reflector that includes a current confinement layer, and a heat dissipating metal member. At least the first semiconductor multilayer reflector, the active layer, the semiconductor layer, and the second semiconductor multilayer reflector are stacked in this order on the substrate. A columnar structure having a top portion, a side surface, and a bottom portion is formed from the second semiconductor multilayer reflector to the semiconductor layer. The heat dissipating metal member is connected to the semiconductor layer exposed at the bottom portion of the columnar structure.
公开日期2016-02-02
申请日期2014-05-12
状态授权
源URL[http://ir.opt.ac.cn/handle/181661/37750]  
专题半导体激光器专利数据库
作者单位FUJI XEROX CO., LTD.
推荐引用方式
GB/T 7714
HAYAKAWA, JUNICHIRO,TAKEDA, KAZUTAKA,MURAKAMI, AKEMI. Surface emitting semiconductor laser, surface emitting semiconductor laser array, surface emitting semiconductor laser device, optical transmission device, information processing apparatus, and method of producing surface emitting semiconductor laser. US9252562. 2016-02-02.

入库方式: OAI收割

来源:西安光学精密机械研究所

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